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PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH H21B1 H21B2 H21B3 DESCRIPTION The H21B1, H21B2 and H21B3 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efﬁciency, ambient light DATA SHEET. MOS FIELD EFFECT TRANSISTOR. 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE. DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.